J. Weingarten, S. Altenheiner, M. Beimforde, M. Benoit, M. Bomben, G. Calderini, C. Gallrapp, M. George, S. Gibson, S. Grinstein, Z. Janoska, J. Jentzsch, O. Jinnouchi, T. Kishida, A. La Rosa, V. Libov, A. Macchiolo, G. Marchiori, D. Münstermann, R. Nagai, G. Piacquadio, B. Ristic, I. Rubinskiy, A. Rummler, Y. Takubo, G. Troska, S. Tsiskaridtze, I. Tsurin, Y. Unno, P. Weigel, T. Wittig
Results of beam tests with planar silicon pixel sensors aimed towards the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades are presented. Measurements include spatial resolution, charge collection performance and charge sharing between neighbouring cells as a function of track incidence angle for different bulk materials. Measurements of n-in-n pixel sensors are presented as a function of fluence for different irradiations. Furthermore p-type silicon sensors from several vendors with slightly differing layouts were tested. All tested sensors were connected by bump-bonding to the ATLAS Pixel read-out chip. We show that both n-type and p-type tested planar sensors are able to collect significant charge even after integrated fluences expected at HL-LHC.
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http://arxiv.org/abs/1204.1266
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